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K6F3216T6M-F - 2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

Samsung semiconductor

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Datasheet Details

Part number	K6F3216T6M-F
Manufacturer	Samsung semiconductor
File Size	167.24 KB
Description	2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Datasheet	K6F3216T6M-F_Samsungsemiconductor.pdf

K6F3216T6M-F Product details

Description

The K6F3216T6M families are fabricated by SAMSUNG′s advanced full CMOS process technology.

Features

Process Technology: Full CMOS.
Organization: 2M x16.
Power Supply Voltage: 2.7~3.6V.
Low Data Retention Voltage: 1.5V(Min).
Three State Outputs.
Package Type: 55-TBGA-7.50x12.00 CMOS SRAM.

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Published: Apr 7, 2005 |