K6F3216T6M-F Datasheet - Samsung semiconductor

K6F3216T6M-F 2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

The K6F3216T6M families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design. The families also support low data retention voltage for battery back-up operatio.

K6F3216T6M Family Document Title 2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM CMOS SRAM Revision History Revision No. History 1.0 Draft Date November 4, 2003 Remark Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. 1 Revision 1.0 No.

K6F3216T6M-F_Samsungsemiconductor.pdf