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K6F3216T6M-F

2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

K6F3216T6M-F Features

* Process Technology: Full CMOS

* Organization: 2M x16

* Power Supply Voltage: 2.7~3.6V

* Low Data Retention Voltage: 1.5V(Min)

* Three State Outputs

* Package Type: 55-TBGA-7.50x12.00 CMOS SRAM GENERAL DESCRIPTION The K6F3216T6M families are fabricat

K6F3216T6M-F General Description

The K6F3216T6M families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design. The families also support low data retention voltage for battery back-up operatio.

K6F3216T6M-F Datasheet (167.24 KB)

Preview of K6F3216T6M-F PDF

Datasheet Details

Part number:

K6F3216T6M-F

Manufacturer:

Samsung semiconductor

File Size:

167.24 KB

Description:

2m x16 bit super low power and low voltage full cmos static ram.
K6F3216T6M Family Document Title 2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM CMOS SRAM Revision History Revision No. History 1.0.

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TAGS

K6F3216T6M-F x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Samsung semiconductor

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