K6F3216T6M-F 2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

Samsung semiconductor

Description

K6F3216T6M Family Document Title 2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM CMOS SRAM Revision History Revision No.History 1.0.
The K6F3216T6M families are fabricated by SAMSUNG′s advanced full CMOS process technology.

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Datasheet Specifications

Part number: K6F3216T6M-F
Manufacturer: Samsung semiconductor
File Size: 167.24 KB
Datasheet: K6F3216T6M-F_Samsungsemiconductor.pdf
Description: 2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

Features

* Process Technology: Full CMOS
* Organization: 2M x16
* Power Supply Voltage: 2.7~3.6V
* Low Data Retention Voltage: 1.5V(Min)
* Three State Outputs

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K6F3216T6M-F x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Samsung semiconductor

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