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K6R1004C1C

High-Speed CMOS Static RAM

K6R1004C1C Features

* Fast Access Time 10,12,15ns(Max.)

* Low Power Dissipation Standby (TTL) : 30mA(Max.) (CMOS) : 5mA(Max.) 0.5mA(Max.) L-Ver. only Operating K6R1004C1C-10 : 75mA(Max.) K6R1004C1C-12 : 70mA(Max.) K6R1004C1C-15 : 68mA(Max.)

* Single 5.0V±10% Power Supply

* TTL Compatible

K6R1004C1C General Description

The K6R1004C1C is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1C uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG′s advan.

K6R1004C1C Datasheet (126.75 KB)

Preview of K6R1004C1C PDF

Datasheet Details

Part number:

K6R1004C1C

Manufacturer:

Samsung semiconductor

File Size:

126.75 KB

Description:

High-speed cmos static ram.
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K6R1004C1C High-Speed CMOS Static RAM Samsung semiconductor

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