K6R1004C1C High-Speed CMOS Static RAM

Samsung semiconductor

Description

www.DataSheet4U.com PRELIMINARY PRELIMINARY CMOS SRAM K6R1004C1C-C/C-L, K6R1004C1C-I/C-P Document Title 256Kx4 Bit (with OE) High-Speed CMOS Static .
The K6R1004C1C is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits.

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Datasheet Specifications

Part number: K6R1004C1C
Manufacturer: Samsung semiconductor
File Size: 126.75 KB
Datasheet: K6R1004C1C_Samsungsemiconductor.pdf
Description: High-Speed CMOS Static RAM

Features

* Fast Access Time 10,12,15ns(Max. )
* Low Power Dissipation Standby (TTL) : 30mA(Max. ) (CMOS) : 5mA(Max. ) 0.5mA(Max. ) L-Ver. only Operating K6R1004C1C-10 : 75mA(Max. ) K6R1004C1C-12 : 70mA(Max. ) K6R1004C1C-15 : 68mA(Max. )
* Single 5.0V±10% Power Supply
* TTL Compatible

Applications

* The K6R1004C1C is packaged in a 400 mil 32-pin plastic SOJ. ORDERING INFORMATION K6R1004C1C-C10/C12/C15 K6R1004C1C-I10/I12/I15 Commercial Temp. Industrial Temp. PIN CONFIGURATION (Top View) N. C A0 1 2 3 4 5 6 7 8 9 32 A17 31 A16 30 A15 29 A14 28 A13 27 OE FUNCTIONAL BLOCK DIAGRAM A1 A2 A3 Clk

K6R1004C1C Distributors

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K6R1004C1C High-Speed CMOS Static RAM Samsung semiconductor

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