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K6R1008C1B-C10 Datasheet - Samsung semiconductor

K6R1008C1B-C10, 128Kx8 Bit High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.

PRELIMINARY K6R1008C1B-C, K6R1008C1B-I Document Title 128Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out.Operated at Commercial an.
The K6R1008C1B is a 1,048,576-bit high-speed Static Random Access Memory organized as 131,072 words by 8 bits.
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K6R1008C1B-C10_Samsungsemiconductor.pdf

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Datasheet Details

Part number:

K6R1008C1B-C10

Manufacturer:

Samsung semiconductor

File Size:

169.67 KB

Description:

128Kx8 Bit High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.

Features

* Fast Access Time 8,10,12ns(Max. )
* Low Power Dissipation Standby (TTL) : 50mA(Max. ) (CMOS) : 10mA(Max. ) Operating K6R1008C1B-8 : 160mA(Max. ) K6R1008C1B-10 : 155mA(Max. ) K6R1008C1B-12 : 150mA(Max. )
* Single 5.0V ±10% Power Supply
* TTL Compatible Inputs and Outputs

Applications

* The K6R1008C1B is packaged in a 400mil 32-pin plastic SOJ or TSOP2 forward. ORDERING INFORMATION K6R1008C1B-C8/C10/C12 K6R1008C1B-I8/I10/I12 Commercial Temp. Industrial Temp. PIN CONFIGURATION(Top View) A0 1 2 3 4 5 6 7 8 9 32 A16 31 A15 30 A14 29 A13 28 OE 27 I/O8 26 I/O7 FUNCTIONAL BLOCK DI

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