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K6R1008C1B-I8

128Kx8 Bit High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.

K6R1008C1B-I8 Features

* Fast Access Time 8,10,12ns(Max.)

* Low Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS) : 10mA(Max.) Operating K6R1008C1B-8 : 160mA(Max.) K6R1008C1B-10 : 155mA(Max.) K6R1008C1B-12 : 150mA(Max.)

* Single 5.0V ±10% Power Supply

* TTL Compatible Inputs and Outputs

K6R1008C1B-I8 General Description

The K6R1008C1B is a 1,048,576-bit high-speed Static Random Access Memory organized as 131,072 words by 8 bits. The K6R1008C1B uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG′s advan.

K6R1008C1B-I8 Datasheet (169.67 KB)

Preview of K6R1008C1B-I8 PDF

Datasheet Details

Part number:

K6R1008C1B-I8

Manufacturer:

Samsung semiconductor

File Size:

169.67 KB

Description:

128kx8 bit high speed static ram5v operating/ revolutionary pin out. operated at commercial and industrial temperature ranges..
PRELIMINARY K6R1008C1B-C, K6R1008C1B-I Document Title 128Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial an.

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TAGS

K6R1008C1B-I8 128Kx8 Bit High Speed Static RAM5V Operating Revolutionary Pin out. Operated Commercial and Industrial Temperature Ranges. Samsung semiconductor

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