K6R1008C1B-I12 Datasheet - Samsung semiconductor

K6R1008C1B-I12 128Kx8 Bit High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.

The K6R1008C1B is a 1,048,576-bit high-speed Static Random Access Memory organized as 131,072 words by 8 bits. The K6R1008C1B uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG′s advan.

PRELIMINARY K6R1008C1B-C, K6R1008C1B-I Document Title 128Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. Preliminary PRELIMINARY CMOS SRAM Revision History Rev No. Rev. 0.0 Rev.1.0 History Initial release with Design Target. Release to Preliminary Data Sheet. 1.1. Replace Design Target to Preliminary. Release to Final Data Sheet. 2.1. Delete Preliminary. 2.2. Delete 32-SOJ-300 package. 2.3. Delete L-version. 2.4. Del.

K6R1008C1B-I12 Features

* Fast Access Time 8,10,12ns(Max.)

* Low Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS) : 10mA(Max.) Operating K6R1008C1B-8 : 160mA(Max.) K6R1008C1B-10 : 155mA(Max.) K6R1008C1B-12 : 150mA(Max.)

* Single 5.0V ±10% Power Supply

* TTL Compatible Inputs and Outputs

K6R1008C1B-I12 Datasheet (169.67 KB)

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Datasheet Details

Part number:

K6R1008C1B-I12

Manufacturer:

Samsung semiconductor

File Size:

169.67 KB

Description:

128kx8 bit high speed static ram5v operating/ revolutionary pin out. operated at commercial and industrial temperature ranges..

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K6R1008C1B-I12 128Kx8 Bit High Speed Static RAM5V Operating Revolutionary Pin out. Operated Commercial and Industrial Temperature Ranges. Samsung semiconductor

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