K6R1016V1D

64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.

Samsung semiconductor

Image	Manufacturer	B2B MPN	Description	Distributor	Stock	Quantity	Price	Buy Now
	Samsung Semiconductor	K6R1016V1D-TI10T00		Bristol Electronics	134	0	$0

K6R1016V1D Datasheet (259.83 KB)

K6R1016V1D Datasheet Preview — Preview of K6R1016V1D PDF Datasheet

Datasheet Details

Part number:

K6R1016V1D

Manufacturer:

Samsung semiconductor

File Size:

259.83 KB

Description:

64kx16 bit high-speed cmos static ram(3.3v operating) operated at commercial and industrial temperature ranges.

K6R1016V1D Features

* Fast Access Time 8,10ns(Max.)

* Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS) : 5mA(Max.) Operating K6R1016V1D- 08: 80mA(Max.) K6R1016V1D-10: 65mA(Max.)

* Single 3.3V Power Supply

* TTL Compatible Inputs and Outputs

* Fully Static Operation - No Cl

K6R1016V1D General Description

The K6R1016V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits. The K6R1016V1D uses 16 common input and output lines and has at output enable pin which operates faster than address access time at read cycle. Also it allows that lower and upper byte acce.

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