K6R1016V1D, K6R-1016V Datasheet - Samsung semiconductor

K6R1016V1D, K6R-1016V, 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.

K6R1016V1D Document Title 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.for AT&T CM.
The K6R1016V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits.

datasheet Preview Page 1 from Datasheet4u.com

K6R-1016V-1D.pdf

K6R1016V1D Datasheet Preview — This datasheet PDF includes multiple part numbers: K6R1016V1D, K6R-1016V. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

K6R1016V1D, K6R-1016V

Manufacturer:

Samsung semiconductor

File Size:

259.83 KB

Description:

64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.

Note:

This datasheet PDF includes multiple part numbers: K6R1016V1D, K6R-1016V.
Please refer to the document for exact specifications by model.

Features

* Fast Access Time 8,10ns(Max. )
* Low Power Dissipation Standby (TTL) : 20mA(Max. ) (CMOS) : 5mA(Max. ) Operating K6R1016V1D- 08: 80mA(Max. ) K6R1016V1D-10: 65mA(Max. )
* Single 3.3V Power Supply
* TTL Compatible Inputs and Outputs
* Fully Static Operation - No Cl

Applications

* The K6R1016V1D is packaged in a 400mil 44-pin plastic SOJ or TSOP2 forward or 48-TBGA. 64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating) FUNCTIONAL BLOCK DIAGRAM Clk Gen. A0 A1 A2 A3 A4 A5 A6 A7 A8 I/O1~I/O8 I/O9 ~I/O16 Pre-Charge Circuit Row Select Memory Array 512 Rows 128x16 Columns

K6R1016V1D Distributors

📁 Related Datasheet

K6R4008C1C K6R4008C1C-C K6R4008C1C-E K6R4008C1C-I K6R4016C1D

📌 All Tags

K6R-1016V 64Kx16 Bit High-Speed CMOS Static RAM3.3V Operating Operated Commercial and Industrial Temperature Ranges. Samsung semiconductor

Samsung semiconductor K6R1016V1D-like datasheet