K6R1016V1D Datasheet, Ranges., Samsung semiconductor

K6R1016V1D Features

• Ranges.
• Fast Access Time 8,10ns(Max.)
• Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS) : 5mA(Max.) Operating K6R1016V1D- 08: 80mA(Max.) K6R1016V1D-10: 65mA(Max.)

PDF File Details

Part number:

K6R1016V1D

Manufacturer:

Samsung semiconductor

File Size:

259.83kb

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📄 Datasheet

Description:

64kx16 bit high-speed cmos static ram(3.3v operating) operated at commercial and industrial temperature ranges.. The K6R1016V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits. The K6R1016V1D uses 16

K6R1016V1D Application

• Applications The K6R1016V1D is packaged in a 400mil 44-pin plastic SOJ or TSOP2 forward or 48-TBGA. 64K x 16 Bit High-Speed CMOS Static RAM(3.3V O

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