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K6R4016V1 Datasheet - Samsung semiconductor

K6R4016V1, 1Mx4 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.

K6R4004C1D Document Title 1Mx4 Bit High Speed Static RAM(5.0V Operating).Operated at Commercial and Industrial Temperature Ranges.PRELIMINARY CMOS .
The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits.
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K6R4016V1_Samsungsemiconductor.pdf

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Datasheet Details

Part number:

K6R4016V1

Manufacturer:

Samsung semiconductor

File Size:

177.02 KB

Description:

1Mx4 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.

Features

* Fast Access Time 10ns(Max. )
* Low Power Dissipation Standby (TTL) : 20mA(Max. ) (CMOS) : 5mA(Max. ) Operating K6R4004C1D-10 : 65mA(Max. ) Single 5.0V±10% Power Supply
* TTL Compatible Inputs and Outputs
* Fully Static Operation - No Clock or Refresh required

Applications

* The K6R4004C1D is packaged in a 400 mil 32-pin plastic SOJ. PIN CONFIGURATION(Top View) A0 A1 A2 A3 A4 CS I/O1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 A19 A18 A17 A16 A15 OE 26 I/O4 FUNCTIONAL BLOCK DIAGRAM Clk Gen. A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 I/O1~I/O4 Vcc Vss SOJ 25 24 V

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