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K6R4016V1

1Mx4 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.

K6R4016V1 Features

* Fast Access Time 10ns(Max.)

* Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS) : 5mA(Max.) Operating K6R4004C1D-10 : 65mA(Max.) Single 5.0V±10% Power Supply

* TTL Compatible Inputs and Outputs

* Fully Static Operation - No Clock or Refresh required

K6R4016V1 General Description

The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG′s adv.

K6R4016V1 Datasheet (177.02 KB)

Preview of K6R4016V1 PDF

Datasheet Details

Part number:

K6R4016V1

Manufacturer:

Samsung semiconductor

File Size:

177.02 KB

Description:

1mx4 bit high speed static ram(5.0v operating). operated at commercial and industrial temperature ranges..
K6R4004C1D Document Title 1Mx4 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. PRELIMINARY CMOS .

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TAGS

K6R4016V1 1Mx4 Bit High Speed Static RAM5.0V Operating. Operated Commercial and Industrial Temperature Ranges. Samsung semiconductor

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