K6R4016V1C Datasheet - Samsung semiconductor

K6R4016V1C 256Kx16 Bit High Speed Static RAM

The K6R4016V1C is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016V1C uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that lower and upper byte acc.

www.DataSheet4U.com PRELIMPreliminaryPPPPPPPPPINARY CMOS SRAM K6R4016V1C-C/C-L, K6R4016V1C-I/C-P Document Title 256Kx16 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. Rev. 0.0 Rev. 1.0 History Initial release with Preliminary. 1.1 Removed Low power Version. 1.2 Removed Data Retention Characteristics. 1.3 Changed ISB1 to 20mA Relax D.C parameters. Item ICC 12ns 15ns 20ns Previous 180mA 175mA 170mA Current 200mA 195m.

K6R4016V1C Features

* Fast Access Time 10,12,15ns(Max.)

* Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS) : 10mA(Max.) 1.2mA(Max.) L-Ver. only Operating K6R4016V1C-10 : 160mA(Max.) K6R4016V1C-12 : 150mA(Max.) K6R4016V1C-15 : 140mA(Max.)

* Single 3.3 ±0.3V Power Supply

* TTL Compa

K6R4016V1C_Samsungsemiconductor.pdf