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K6R4004C1C-I Datasheet - Samsung semiconductor

1Mx4 Bit High Speed Static RAM

K6R4004C1C-I Features

* Fast Access Time 10,12,15,20ns(Max.)

* Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS) : 10mA(Max.) Operating K6R4004C1C-10 : 160mA(Max.) K6R4004C1C-12 : 150mA(Max.) K6R4004C1C-15 : 140mA(Max.) K6R4004C1C-20 : 130mA(Max.)

* Single 5.0V ±10% Power Supply

* TT

K6R4004C1C-I General Description

The K6R4004C1C is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1C uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG′s adv.

K6R4004C1C-I Datasheet (135.83 KB)

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Datasheet Details

Part number:

K6R4004C1C-I

Manufacturer:

Samsung semiconductor

File Size:

135.83 KB

Description:

1mx4 bit high speed static ram.
K6R4004C1C-C, K6R4004C1C-I, K6R4004C1C-E Document Title 1Mx4 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperature .

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K6R4004C1C-I 1Mx4 Bit High Speed Static RAM Samsung semiconductor

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