K9F1G16Q0M - 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory

Samsung semiconductor

Datasheet Details

Part number	K9F1G16Q0M
Manufacturer	Samsung semiconductor
File Size	729.28 KB
Description	128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
Datasheet	K9F1G16Q0M_Samsungsemiconductor.pdf

Offered in 128Mx8bit or 64Mx16bit, the K9F1GXXX0M is 1G bit with spare 32M bit capacity.

Voltage Supply -1.8V device(K9F1GXXQ0M): 1.70V~1.95V - 2.65V device(K9F1GXXD0M) : 2.4~2.9V -3.3V device(K9F1GXXU0M): 2.7 V ~3.6 V.
Organization - Memory Cell Array -X8 device(K9F1G08X0M) : (128M + 4,096K)bit x 8bit -X16 device(K9F1G16X0M) : (64M + 2,048K)bit x 16bit - Data Register -X8 device(K9F1G08X0M): (2K + 64)bit x8bit -X16 device(K9F1G16X0M): (1K + 32)bit x16bit - Cache Register -X8 device(K9F1G08X0M): (2K + 64)bit x8bit -X16 device(K9F1G16X0M): (1K + 32)bit x16bit.

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Published: Apr 7, 2005 |