Datasheet Details
Part number:
K9F1G16Q0M
Manufacturer:
Samsung semiconductor
File Size:
729.28 KB
Description:
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
Features
* Voltage Supply -1.8V device(K9F1GXXQ0M): 1.70V~1.95V - 2.65V device(K9F1GXXD0M) : 2.4~2.9V -3.3V device(K9F1GXXU0M): 2.7 V ~3.6 V
* Organization - Memory Cell Array -X8 device(K9F1G08X0M) : (128M + 4,096K)bit x 8bit -X16 device(K9F1G16X0M) : (64M + 2,048K)bit x 16bit - Data Registe
K9F1G16Q0M_Samsungsemiconductor.pdf
K9F1G16Q0M, 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
Offered in 128Mx8bit or 64Mx16bit, the K9F1GXXX0M is 1G bit with spare 32M bit capacity.
Its NAND cell provides the most costeffective solution for the solid state mass storage market.
A program operation can be performed in typical 300µs on the 2112byte(X8 device) or 1056-word(X16 device) page and
K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History 1.
Initial issue 1.
Iol(R/B) of 1.8V is changed.
- min.
value : 7mA > 3mA - Typ.
value : 8mA > 4mA 2.
AC parameter is changed.
tRP(min.) : 30ns > 25ns 3.
A recovery time of minimum 1µs is required before internal circuit gets ready for any command sequences as shown in Figure 17.
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