K9F1G16Q0M 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory

Samsung semiconductor

Description

K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revisio.
Offered in 128Mx8bit or 64Mx16bit, the K9F1GXXX0M is 1G bit with spare 32M bit capacity.

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Datasheet Specifications

Part number: K9F1G16Q0M
Manufacturer: Samsung semiconductor
File Size: 729.28 KB
Datasheet: K9F1G16Q0M_Samsungsemiconductor.pdf
Description: 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory

Features

* Voltage Supply -1.8V device(K9F1GXXQ0M): 1.70V~1.95V - 2.65V device(K9F1GXXD0M) : 2.4~2.9V -3.3V device(K9F1GXXU0M): 2.7 V ~3.6 V
* Organization - Memory Cell Array -X8 device(K9F1G08X0M) : (128M + 4,096K)bit x 8bit -X16 device(K9F1G16X0M) : (64M + 2,048K)bit x 16bit - Data Registe

Applications

* such as solid state file storage and other portable applications requiring non-volatility. 3 K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M PIN CONFIGURATION (TSOP1) K9F1GXXX0M-YCB0,PCB0/YIB0,PIB0 X16 N. C N. C N. C N. C N. C N. C R/B RE CE N. C N. C Vcc Vss N. C N. C CLE ALE WE WP N. C N.

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📁 Related Datasheet

K9F1G16Q0M-PCB0 K9F1G16Q0M-PIB0 K9F1G16Q0M-YCB0 K9F1G16Q0M-YIB0 K9F1G16U0M-PCB0 K9F1G16U0M-PIB0

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K9F1G16Q0M 128M Bit 64M Bit NAND Flash Memory Samsung semiconductor

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