K9F1G16Q0M Datasheet, Memory, Samsung semiconductor

K9F1G16Q0M Features

• Memory
• Voltage Supply -1.8V device(K9F1GXXQ0M): 1.70V~1.95V - 2.65V device(K9F1GXXD0M) : 2.4~2.9V -3.3V device(K9F1GXXU0M): 2.7 V ~3.6 V
• Organization - Memory Cell Array -X

PDF File Details

Part number:

K9F1G16Q0M

Manufacturer:

Samsung semiconductor

File Size:

729.28kb

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📄 Datasheet

Description:

128m x 8 bit / 64m x 16 bit nand flash memory. Offered in 128Mx8bit or 64Mx16bit, the K9F1GXXX0M is 1G bit with spare 32M bit capacity. Its NAND cell provides the most costeffectiv

K9F1G16Q0M Application

• Applications such as solid state file storage and other portable applications requiring non-volatility. 3 K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16

TAGS

K9F1G16Q0M

Samsung semiconductor

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ELECTRONICS March. 2003 San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 1Gb 1.8V NAN.

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ELECTRONICS March. 2003 San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 1Gb 1.8V NAN.

K9F1G16Q0M-YCB0 - 1Gb 1.8V NAND Flash Errata (Samsung)
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K9F1G16Q0M-YIB0 - 1Gb 1.8V NAND Flash Errata (Samsung)
ELECTRONICS March. 2003 San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 1Gb 1.8V NAN.

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K9F1G16U0M - 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory (Samsung semiconductor)
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K9F1G16U0M-PCB0 - 1Gb 1.8V NAND Flash Errata (Samsung)
ELECTRONICS March. 2003 San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 1Gb 1.8V NAN.

K9F1G16U0M-PIB0 - 1Gb 1.8V NAND Flash Errata (Samsung)
ELECTRONICS March. 2003 San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 1Gb 1.8V NAN.

K9F1G16U0M-YCB0 - 1Gb 1.8V NAND Flash Errata (Samsung)
ELECTRONICS March. 2003 San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 1Gb 1.8V NAN.

K9F1G16U0M-YIB0 - 1Gb 1.8V NAND Flash Errata (Samsung)
ELECTRONICS March. 2003 San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 1Gb 1.8V NAN.