K9F1G16U0M, K9F1G08D0M Datasheet - Samsung semiconductor

Datasheet Details

Part number:

K9F1G16U0M, K9F1G08D0M

Manufacturer:

Samsung semiconductor

File Size:

790.90 KB

Description:

128M x 8 Bit / 64M x 16 Bit NAND Flash Memory

Note:

This datasheet PDF includes multiple part numbers: K9F1G16U0M, K9F1G08D0M.
Please refer to the document for exact specifications by model.

www.DataSheet4U.com K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory FLASH MEMORY Revision History Revision No History 0.0 1.

Initial issue Draft Date July.

2001 Remark Advance 0.1 1.

Iol(R/B) of 1.8V is changed.

K9F1G08D0M_Samsungsemiconductor.pdf

K9F1G16U0M Datasheet Preview — This datasheet PDF includes multiple part numbers: K9F1G16U0M, K9F1G08D0M. Please refer to the document for exact specifications by model.

K9F1G16U0M, K9F1G08D0M, 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory

Initial issue Draft Date July.

2001 Remark Advance 0.1 1.

Iol(R/B) of 1.8V is changed.

- min.

value : 7mA > 3mA - Typ.

value : 8mA > 4mA Nov.

2001 2.

AC parameter is changed.

tRP(min.) : 30ns > 25ns 3.

A recovery time of minimum 1µs is required before in

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K9F1G08D0M 128M Bit 64M Bit NAND Flash Memory Samsung semiconductor

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