KM23C4100DT Datasheet - Samsung semiconductor

KM23C4100DT 4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM

The KM23C4100D(E)T is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 524,288 x 8 bit(byte mode) or as 262,144 x 16 bit(word mode) depending on BHE voltage level.(See mode selection table) This device operates with a 5V single po.

KM23C4100DT Features

* Switchable organization 524,288 x 8(byte mode) 262,144 x 16(word mode)

* Fast access time : 80ns(Max.)

* Supply voltage : single +5V

* Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.)

* Fully static operation

* All inputs and outputs T

KM23C4100DT_Samsungsemiconductor.pdf