KM416V1000B Datasheet - Samsung semiconductor

KM416V1000B 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode

CMOS DRAM This is a family of 1,048,576 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-5,-6 or -7), power consumption(Normal or Low powe.

KM416V1000B Features

* of this family. All of this family have CASbefore-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 1Mx16 Fast Page Mode DRAM family is fabricated using Samsung's advanced CMOS process to realize high band-width, low po

KM416V1000B_Samsungsemiconductor.pdf

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Datasheet Details

Part number:

KM416V1000B

Manufacturer:

Samsung semiconductor

File Size:

84.70 KB

Description:

1m x 16bit cmos dynamic ram with fast page mode.

KM416V1000B Distributor

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KM416V1000B KM416V1000B 16Bit CMOS Dynamic RAM with Fast Page Mode Samsung semiconductor