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KM416V1004C Datasheet - Samsung semiconductor

1M x 16Bit CMOS Dynamic RAM with Extended Data Out

KM416V1004C Features

* of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 1Mx16 EDO Mode DRAM family is fabricated using Samsung′ s advanced CMOS process to realize high band-width, low power

KM416V1004C General Description

This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 or -6), power co.

KM416V1004C Datasheet (804.64 KB)

Preview of KM416V1004C PDF

Datasheet Details

Part number:

KM416V1004C

Manufacturer:

Samsung semiconductor

File Size:

804.64 KB

Description:

1m x 16bit cmos dynamic ram with extended data out.

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Stock and price

Distributor
Microchip Technology Inc
MPLAD15KP180CAE3
0 In Stock
Qty : 500 units
Unit Price : $24.41

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KM416V1004C 16Bit CMOS Dynamic RAM with Extended Data Out Samsung semiconductor

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