KM416V254D Datasheet (Samsung semiconductor) - 256K x 16Bit CMOS Dynamic RAM with Extended Data Out

KM416V254D, 256K x 16Bit CMOS Dynamic RAM with Extended Data Out

This is a family of 262,144 x 16 bit Extended Data Out Mode CMOS DRAMs.

Extended Data Out Mode offers high speed random access of memory cells within the same row.

Power supply voltage(+5.0V or +3.3V), Access time (-5,-6 or -7), power consumption(Normal or Low power) and package type(SOJ or TSOP-II)

KM416V254D Features

* of this family. All of this family have CAS-before-RAS refresh, RASonly refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 256Kx16 EDO Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power