KM68U1000B, KM68V1000B Datasheet - Samsung semiconductor

KM68U1000B (KM68V1000B / KM68U1000B) 128K X 8bit Low Power and Low Voltage CMOS Statinc RAM

The KM68V1000B and KM68U1000B families are fabricated by SAMSUNG′s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for battery back-u.

KM68V1000B, KM68U1000B Family Document Title 128K x8 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 1.0 2.0 Initial draft Finalize Revise - Change datasheet format Draft Data Remark August 12, 1995 Preliminary April 12, 1996 March 7, 1998 Final Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your .

KM68U1000B Features

* Process Technology : Poly Load

* Organization : 128Kx8

* Power Supply Voltage : KM68V1000B family : 3.0~3.6V KM68U1000B family : 2.7~3.3V

* Low Data Retention Voltage : 2V(Min)

* Three state output and TTL Compatible

* Package Type : 32-SOP, 32-TSOP1

KM68V1000B_Samsungsemiconductor.pdf

KM68U1000B Datasheet Preview — This datasheet PDF includes multiple part numbers: KM68U1000B, KM68V1000B. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

KM68U1000B, KM68V1000B

Manufacturer:

Samsung semiconductor

File Size:

183.96 KB

Description:

(km68v1000b / km68u1000b) 128k x 8bit low power and low voltage cmos statinc ram.

Note:

This datasheet PDF includes multiple part numbers: KM68U1000B, KM68V1000B.
Please refer to the document for exact specifications by model.

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TAGS

KM68U1000B KM68V1000B KM68V1000B KM68U1000B 128K 8bit Low Power and Low Voltage CMOS Statinc RAM Samsung semiconductor

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