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K4M513233E-L

4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

K4M513233E-L Features

* 3.0V & 3.3V power supply.

* LVCMOS compatible with multiplexed address.

* Four banks operation.

* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).

* EMRS cycle

K4M513233E-L General Description

The K4M513233E is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every c.

K4M513233E-L Datasheet (140.88 KB)

Preview of K4M513233E-L PDF

Datasheet Details

Part number:

K4M513233E-L

Manufacturer:

Samsung

File Size:

140.88 KB

Description:

4m x 32bit x 4 banks mobile sdram in 90fbga.

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K4M513233E-L 32Bit Banks Mobile SDRAM 90FBGA Samsung

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