K4M513233E-L - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

Samsung

K4M513233E-L Datasheet Preview — Preview of K4M513233E-L PDF

Datasheet Details

Part number	K4M513233E-L
Manufacturer	Samsung
File Size	140.88 KB
Description	4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
Datasheet	K4M513233E-L_Samsungsemiconductor.pdf

K4M513233E-L Product details

Description

The K4M513233E is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology.

Features

3.0V & 3.3V power supply.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
EMRS cycle with address key programs.
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
Special Function Support. -. PASR.

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K4M513233E - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

Published: Apr 25, 2005 |