Part number:
K4M513233E-MC
Manufacturer:
Samsung
File Size:
140.88 KB
Description:
4m x 32bit x 4 banks mobile sdram in 90fbga.
K4M513233E-MC_Samsungsemiconductor.pdf
Datasheet Details
Part number:
K4M513233E-MC
Manufacturer:
Samsung
File Size:
140.88 KB
Description:
4m x 32bit x 4 banks mobile sdram in 90fbga.
K4M513233E-MC, 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
The K4M513233E is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology.
Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every c
K4M513233E-MC Features
* 3.0V & 3.3V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
* EMRS cycle
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