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K4Y54164UF, K4Y54084UF XDR/RDRAM

K4Y54164UF Description

www.DataSheet4U.com K4Y5416(/08/04)4UF XDR DRAM 256Mbit XDR DRAM(F-die) 2M x 16(/8/4) bit x 8s Banks Version 1.0 Jan.2005 Version 1.0 Jan.2005 .
XDR DRAM The timing diagrams in Figure 1 illustrate XDR DRAM device write and read transactions.

K4Y54164UF Features

* Highest pin bandwidth available - 4000/3200/2400 Mb/s Octal Data Rate(ODR) Signaling
* Bi-directional differential RSL(DRSL) - Flexible read/write bandwidth allocation - Minimum pin count
* Programmable on-chip termination - Adaptive impedance matching - Reduced system cost

K4Y54164UF Applications

* including computer memory, graphics, video, and any other application where high bandwidth and low latency are required. The 256Mb XDR DRAM device is a CMOS DRAM organized as 16M words by 16bits. The use of Differential Rambus Signaling Level(DRSL) technology permits 4000/3200/2400 Mb/s transfer ra

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: K4Y54164UF, K4Y54084UF. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
K4Y54164UF, K4Y54084UF
Manufacturer
Samsung Semiconductor
File Size
3.45 MB
Datasheet
K4Y54084UF_SamsungSemiconductor.pdf
Description
XDR/RDRAM
Note
This datasheet PDF includes multiple part numbers: K4Y54164UF, K4Y54084UF.
Please refer to the document for exact specifications by model.

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📌 All Tags

XDR RDRAM Samsung Semiconductor
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