IXYS Corporation
IXDR30N120 - High Voltage IGBT
High Voltage IGBT with optional Diode ISOPLUSTM package
(Electrically Isolated Back Side)
Short Circuit SOA Capability
C
Square RBSOA
G
E IXDR 30
(9 views)
Samsung semiconductor
K4Y50164UC - (K4Y50024UC - K4Y50164UC) 512Mbit XDR TM DRAM
www.DataSheet4U.com
K4Y50164UC K4Y50084UC K4Y50044UC K4Y50024UC
XDRTM DRAM
512Mbit XDR
TM
DRAM(C-die)
Revision 1.1 August 2006
INFORMATION IN T
(9 views)
Samsung semiconductor
K4Y50024UC - (K4Y50024UC - K4Y50164UC) 512Mbit XDR TM DRAM
www.DataSheet4U.com
K4Y50164UC K4Y50084UC K4Y50044UC K4Y50024UC
XDRTM DRAM
512Mbit XDR
TM
DRAM(C-die)
Revision 1.1 August 2006
INFORMATION IN T
(8 views)
Samsung semiconductor
K4Y50044UC - (K4Y50024UC - K4Y50164UC) 512Mbit XDR TM DRAM
www.DataSheet4U.com
K4Y50164UC K4Y50084UC K4Y50044UC K4Y50024UC
XDRTM DRAM
512Mbit XDR
TM
DRAM(C-die)
Revision 1.1 August 2006
INFORMATION IN T
(7 views)
Samsung semiconductor
K4Y50084UC - (K4Y50024UC - K4Y50164UC) 512Mbit XDR TM DRAM
www.DataSheet4U.com
K4Y50164UC K4Y50084UC K4Y50044UC K4Y50024UC
XDRTM DRAM
512Mbit XDR
TM
DRAM(C-die)
Revision 1.1 August 2006
INFORMATION IN T
(7 views)
Samsung Semiconductor
K4Y54084UF - XDR/RDRAM
www.DataSheet4U.com
K4Y5416(/08/04)4UF
XDR DRAM
256Mbit XDR DRAM(F-die)
2M x 16(/8/4) bit x 8s Banks
Version 1.0 Jan. 2005
Version 1.0 Jan. 2005
(7 views)
IXYS
IXDR35N60BD1 - IGBT
IXDR 35N60 BD1
IGBT with optional Diode
High Speed, Low Saturation Voltage
VCES = 600 V IC25 = 38 A V =CE(sat) typ 2.2 V
C ISOPLUS 247TM
G E
G C
(6 views)
Toshiba America Electronic
TC59YM916BKG24A - 512-megabit XDRTM DRAM The Rambus XDRTM DRAM device
TC59YM916BKG24A,32A,32B,40B,32C,40C
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
OVERVIEW
Lead Free
www.DataSheet4U.com
The
(5 views)
Toshiba America Electronic
TC59YM916BKG40B - 512-megabit XDRTM DRAM The Rambus XDRTM DRAM device
TC59YM916BKG24A,32A,32B,40B,32C,40C
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
OVERVIEW
Lead Free
www.DataSheet4U.com
The
(5 views)
Samsung Semiconductor
K4Y54044UF - XDR/RDRAM
www.DataSheet4U.com
K4Y5416(/08/04)4UF
XDR DRAM
256Mbit XDR DRAM(F-die)
2M x 16(/8/4) bit x 8s Banks
Version 1.0 Jan. 2005
Version 1.0 Jan. 2005
(5 views)
Toshiba America Electronic
TC59YM916BKG32A - 512-megabit XDRTM DRAM The Rambus XDRTM DRAM device
TC59YM916BKG24A,32A,32B,40B,32C,40C
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
OVERVIEW
Lead Free
www.DataSheet4U.com
The
(4 views)
Toshiba America Electronic
TC59YM916BKG32B - 512-megabit XDRTM DRAM The Rambus XDRTM DRAM device
TC59YM916BKG24A,32A,32B,40B,32C,40C
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
OVERVIEW
Lead Free
www.DataSheet4U.com
The
(4 views)
Samsung Semiconductor
K4Y54164UF - XDR/RDRAM
www.DataSheet4U.com
K4Y5416(/08/04)4UF
XDR DRAM
256Mbit XDR DRAM(F-die)
2M x 16(/8/4) bit x 8s Banks
Version 1.0 Jan. 2005
Version 1.0 Jan. 2005
(4 views)
Cypress Semiconductor
CY24272 - Rambus XDR Clock Generator
CY24272
Rambus® XDR™ Clock Generator with Zero SDA Hold Time
Rambus® XDR™ Clock Generator with Zero SDA Hold Time
Features
■ Meets Rambus® Extended D
(4 views)
Toshiba America Electronic
TC59YM916BKG40C - 512-megabit XDRTM DRAM The Rambus XDRTM DRAM device
TC59YM916BKG24A,32A,32B,40B,32C,40C
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
OVERVIEW
Lead Free
www.DataSheet4U.com
The
(3 views)
Toshiba America Electronic
TC59YM916BKG32C - 512-megabit XDRTM DRAM The Rambus XDRTM DRAM device
TC59YM916BKG24A,32A,32B,40B,32C,40C
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
OVERVIEW
Lead Free
www.DataSheet4U.com
The
(2 views)
IXYS
IXDR30N120D1 - High Voltage IGBT
High Voltage IGBT with optional Diode ISOPLUSTM package
(Electrically Isolated Back Side)
Short Circuit SOA Capability
C
Square RBSOA
G
E IXDR 30
(2 views)