IXDR30N120D1 (IXYS)
High Voltage IGBT
High Voltage IGBT with optional Diode ISOPLUSTM package
(Electrically Isolated Back Side)
Short Circuit SOA Capability
C
Square RBSOA
G
E IXDR 30
(24 views)
K4Y50044UC (Samsung semiconductor)
(K4Y50024UC - K4Y50164UC) 512Mbit XDR TM DRAM
www.DataSheet4U.com
K4Y50164UC K4Y50084UC K4Y50044UC K4Y50024UC
XDRTM DRAM
512Mbit XDR
TM
DRAM(C-die)
Revision 1.1 August 2006
INFORMATION IN T
(23 views)
K4Y50084UC (Samsung semiconductor)
(K4Y50024UC - K4Y50164UC) 512Mbit XDR TM DRAM
www.DataSheet4U.com
K4Y50164UC K4Y50084UC K4Y50044UC K4Y50024UC
XDRTM DRAM
512Mbit XDR
TM
DRAM(C-die)
Revision 1.1 August 2006
INFORMATION IN T
(22 views)
IXDR30N120 (IXYS Corporation)
High Voltage IGBT
High Voltage IGBT with optional Diode ISOPLUSTM package
(Electrically Isolated Back Side)
Short Circuit SOA Capability
C
Square RBSOA
G
E IXDR 30
(20 views)
K4Y54084UF (Samsung Semiconductor)
XDR/RDRAM
www.DataSheet4U.com
K4Y5416(/08/04)4UF
XDR DRAM
256Mbit XDR DRAM(F-die)
2M x 16(/8/4) bit x 8s Banks
Version 1.0 Jan. 2005
Version 1.0 Jan. 2005
(20 views)
K4Y54164UF (Samsung Semiconductor)
XDR/RDRAM
www.DataSheet4U.com
K4Y5416(/08/04)4UF
XDR DRAM
256Mbit XDR DRAM(F-die)
2M x 16(/8/4) bit x 8s Banks
Version 1.0 Jan. 2005
Version 1.0 Jan. 2005
(20 views)
CY24272 (Cypress Semiconductor)
Rambus XDR Clock Generator
CY24272
Rambus® XDR™ Clock Generator with Zero SDA Hold Time
Rambus® XDR™ Clock Generator with Zero SDA Hold Time
Features
■ Meets Rambus® Extended D
(20 views)
IXDR 35N60 BD1
IGBT with optional Diode
High Speed, Low Saturation Voltage
VCES = 600 V IC25 = 38 A V =CE(sat) typ 2.2 V
C ISOPLUS 247TM
G E
G C
(19 views)
K4Y50024UC (Samsung semiconductor)
(K4Y50024UC - K4Y50164UC) 512Mbit XDR TM DRAM
www.DataSheet4U.com
K4Y50164UC K4Y50084UC K4Y50044UC K4Y50024UC
XDRTM DRAM
512Mbit XDR
TM
DRAM(C-die)
Revision 1.1 August 2006
INFORMATION IN T
(18 views)
K4Y50164UC (Samsung semiconductor)
(K4Y50024UC - K4Y50164UC) 512Mbit XDR TM DRAM
www.DataSheet4U.com
K4Y50164UC K4Y50084UC K4Y50044UC K4Y50024UC
XDRTM DRAM
512Mbit XDR
TM
DRAM(C-die)
Revision 1.1 August 2006
INFORMATION IN T
(17 views)
TC59YM916BKG40C (Toshiba America Electronic)
512-megabit XDRTM DRAM The Rambus XDRTM DRAM device
TC59YM916BKG24A,32A,32B,40B,32C,40C
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
OVERVIEW
Lead Free
www.DataSheet4U.com
The
(16 views)
TC59YM916BKG40B (Toshiba America Electronic)
512-megabit XDRTM DRAM The Rambus XDRTM DRAM device
TC59YM916BKG24A,32A,32B,40B,32C,40C
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
OVERVIEW
Lead Free
www.DataSheet4U.com
The
(14 views)
K4Y54044UF (Samsung Semiconductor)
XDR/RDRAM
www.DataSheet4U.com
K4Y5416(/08/04)4UF
XDR DRAM
256Mbit XDR DRAM(F-die)
2M x 16(/8/4) bit x 8s Banks
Version 1.0 Jan. 2005
Version 1.0 Jan. 2005
(14 views)
TC59YM916BKG32B (Toshiba America Electronic)
512-megabit XDRTM DRAM The Rambus XDRTM DRAM device
TC59YM916BKG24A,32A,32B,40B,32C,40C
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
OVERVIEW
Lead Free
www.DataSheet4U.com
The
(13 views)
TC59YM916BKG32C (Toshiba America Electronic)
512-megabit XDRTM DRAM The Rambus XDRTM DRAM device
TC59YM916BKG24A,32A,32B,40B,32C,40C
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
OVERVIEW
Lead Free
www.DataSheet4U.com
The
(12 views)
TC59YM916BKG32A (Toshiba America Electronic)
512-megabit XDRTM DRAM The Rambus XDRTM DRAM device
TC59YM916BKG24A,32A,32B,40B,32C,40C
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
OVERVIEW
Lead Free
www.DataSheet4U.com
The
(11 views)
TC59YM916BKG24A (Toshiba America Electronic)
512-megabit XDRTM DRAM The Rambus XDRTM DRAM device
TC59YM916BKG24A,32A,32B,40B,32C,40C
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
OVERVIEW
Lead Free
www.DataSheet4U.com
The
(9 views)