Part number:
IXDR30N120
Manufacturer:
IXYS Corporation
File Size:
144.27 KB
Description:
High voltage igbt.
IXDR30N120_IXYSCorporation.pdf
Datasheet Details
Part number:
IXDR30N120
Manufacturer:
IXYS Corporation
File Size:
144.27 KB
Description:
High voltage igbt.
IXDR30N120, High Voltage IGBT
High Voltage IGBT with optional Diode ISOPLUSTM package (Electrically Isolated Back Side) Short Circuit SOA Capability C Square RBSOA G E IXDR 30N120 IXDR 30N120 D1 IXDR 30N120 VCES = 1200 V IC25 = 50 A V = CE(sat) typ 2.4 V C G E IXDR 30N120 D1 ISOPLUS 247TM E153432 G C E Isolated Backside G = Gate C = Collector E = Emitter Symbol VCES VCGR VGES VGEM IC25 IC90 ICM RBSOA tSC (SCSOA) PC TJ Tstg VISOL Weight Symbol V(BR)CES VGE(th) ICES IGES VCE(sat) Conditions TJ = 25°C to 1
IXDR30N120 Features
* NPT IGBT technology - high switching speed - low switching losses - square RBSOA, no latch up - high short circuit capability - positive temperature coefficient for easy paralleling - MOS input, voltage controlled - fast recovery epitaxial diode
* Epoxy meets UL 94V-0
* Iso
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