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IXDR30N120

High Voltage IGBT

IXDR30N120 Features

* NPT IGBT technology - high switching speed - low switching losses - square RBSOA, no latch up - high short circuit capability - positive temperature coefficient for easy paralleling - MOS input, voltage controlled - fast recovery epitaxial diode

* Epoxy meets UL 94V-0

* Iso

IXDR30N120 Datasheet (144.27 KB)

Preview of IXDR30N120 PDF

Datasheet Details

Part number:

IXDR30N120

Manufacturer:

IXYS Corporation

File Size:

144.27 KB

Description:

High voltage igbt.
High Voltage IGBT with optional Diode ISOPLUSTM package (Electrically Isolated Back Side) Short Circuit SOA Capability C Square RBSOA G E IXDR 30.

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IXDR30N120 High Voltage IGBT IXYS Corporation

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