IXDR30N120 Datasheet - IXYS Corporation

IXDR30N120 High Voltage IGBT

High Voltage IGBT with optional Diode ISOPLUSTM package (Electrically Isolated Back Side) Short Circuit SOA Capability C Square RBSOA G E IXDR 30N120 IXDR 30N120 D1 IXDR 30N120 VCES = 1200 V IC25 = 50 A V = CE(sat) typ 2.4 V C G E IXDR 30N120 D1 ISOPLUS 247TM E153432 G C E Isolated Backside G = Gate C = Collector E = Emitter Symbol VCES VCGR VGES VGEM IC25 IC90 ICM RBSOA tSC (SCSOA) PC TJ Tstg VISOL Weight Symbol V(BR)CES VGE(th) ICES IGES VCE(sat) Conditions TJ = 25°C to 1.

IXDR30N120 Features

* NPT IGBT technology - high switching speed - low switching losses - square RBSOA, no latch up - high short circuit capability - positive temperature coefficient for easy paralleling - MOS input, voltage controlled - fast recovery epitaxial diode

* Epoxy meets UL 94V-0

* Iso

IXDR30N120_IXYSCorporation.pdf