IXDR35N60BD1 Datasheet (IXYS)

IXDR35N60BD1, IGBT

IXDR 35N60 BD1 IGBT with optional Diode High Speed, Low Saturation Voltage VCES = 600 V IC25 = 38 A V =CE(sat) typ 2.2 V C ISOPLUS 247TM G E G C E Isolated back surface G = Gate, C = Collector , E = Emitter TAB = Collector Symbol VCES VCGR VGES VGEM IC25 IC90 ICM RBSOA tSC (SCSOA) PC TJ Tstg VISOL FC Weight Symbol V (BR)CES VGE(th) ICES I GES VCE(sat) Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kΩ Continuous Transient TC = 25°C TC = 90°C TC = 90°C, tp =1 ms VGE= ±15 V,

IXDR35N60BD1 Features

* NPT IGBT technology

* low switching losses

* low tail current

* no latch up

* short circuit capability

* positive temperature coefficient for easy paralleling

* MOS input, voltage controlled

* optional ultra fast diode

* Epoxy meets UL 94V-0

* Isolated and U