* NPT IGBT technology
* low switching losses
* low tail current
* no latch up
* short circuit capability
* positive temperature coefficient for easy paralleling
* MOS input, voltage controlled
* optional ultra fast diode
* Epoxy meets UL 94V-0
* Isolated and U
IXDR35N60BD1 Datasheet (111.58 KB)
IXDR35N60BD1
IXYS
111.58 KB
Igbt.
IXDR 35N60 BD1
IGBT with optional Diode
High Speed, Low Saturation Voltage
VCES = 600 V IC25 = 38 A V =CE(sat) typ 2.2 V
C ISOPLUS 247TM
G E
G C .
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