IXDR30N120_IXYSCorporation.pdf
Datasheet Details
Part number:
IXDR30N120D1, IXDR30N120
Manufacturer:
IXYS
File Size:
144.27 KB
Description:
High voltage igbt.
Note:
This datasheet PDF includes multiple part numbers: IXDR30N120D1, IXDR30N120.
Please refer to the document for exact specifications by model.
IXDR30N120D1, IXDR30N120, High Voltage IGBT
High Voltage IGBT with optional Diode ISOPLUSTM package (Electrically Isolated Back Side) Short Circuit SOA Capability C Square RBSOA G E IXDR 30N120 IXDR 30N120 D1 IXDR 30N120 VCES = 1200 V IC25 = 50 A V = CE(sat) typ 2.4 V C G E IXDR 30N120 D1 ISOPLUS 247TM E153432 G C E Isolated Backside G = Gate C = Collector E = Emitter Symbol VCES VCGR VGES VGEM IC25 IC90 ICM RBSOA tSC (SCSOA) PC TJ Tstg VISOL Weight Symbol V(BR)CES VGE(th) ICES IGES VCE(sat) Conditions TJ = 25°C to 1
IXDR30N120D1 Features
* NPT IGBT technology - high switching speed - low switching losses - square RBSOA, no latch up - high short circuit capability - positive temperature coefficient for easy paralleling - MOS input, voltage controlled - fast recovery epitaxial diode
* Epoxy meets UL 94V-0
* Iso
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