K6R1004C1C - High-Speed CMOS Static RAM

Samsung semiconductor

Datasheet Details

The K6R1004C1C is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits..

Fast Access Time 10,12,15ns(Max. ).
Low Power Dissipation Standby (TTL) : 30mA(Max. ) (CMOS) : 5mA(Max. ) 0.5mA(Max. ) L-Ver. only Operating K6R1004C1C-10 : 75mA(Max. ) K6R1004C1C-12 : 70mA(Max. ) K6R1004C1C-15 : 68mA(Max. ).
Single 5.0V±10% Power Supply.
TTL Compatible Inputs and Outputs.
I/O Compatible with 3.3V Device.
Fully Static Operation - No Clock or Refresh required.
Three State Outputs.
2V Minimum Data Retention: L-ver.

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