SWD100N03 Datasheet - Samwin

SWD100N03 N-Channel MOSFET

This N-channel enhancement mode field-effect power transistor using SAMWIN semiconductor’s advanced planar stripe, DMOS technology intended for battery Operated systems like a DC-DC converter motor control , ups ,audio amplifier. Also, especially designed to minimize RDS(ON), low gate charge and hig.

SWD100N03 Features

* High ruggedness

* RDS(ON) (Max 5.3mΩ)@VGS=10V

* Gate Charge (Typ 146nC)

* Improved dv/dt Capability

* 100% Avalanche Tested 1 TO-220 TO-251 TO-252 TO-263 BVDSS : 30V ID : 100A RDS(ON) : 5.3 mΩ 1 2 3 2 3 1 2 1 3 2 2 3 1 3 1. Gate 2. Drain 3. Source General Descripti

SWD100N03_Samwin.pdf