SWD19N10 Datasheet, Mosfet, Samwin

SWD19N10 Features

• Mosfet
• High ruggedness
• RDS(ON) (Max 0.1Ω)@VGS=10V
• Gate Charge (Typ 100nC)
• Improved dv/dt Capability
• 100% Avalanche Tested TO-220 TO-252 BVD

PDF File Details

Part number:

SWD19N10

Manufacturer:

Samwin

File Size:

849.53kb

Download:

📄 Datasheet

Description:

N-channel mosfet. This N-channel enhancement mode field-effect power transistor using SAMWIN semiconductor’s advanced planar stripe, DMOS technology in

TAGS

SWD19N10

Samwin

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