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SWD1N60

N-Channel MOSFET

SWD1N60 Features

* High ruggedness

* RDS(ON) (Max 12 Ω)@VGS=10V

* Gate Charge (Max 6nC)

* Improved dv/dt Capability

* 100% Avalanche Tested TO-251 TO-252 TO-126 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technol

SWD1N60 General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high ef.

SWD1N60 Datasheet (855.60 KB)

Preview of SWD1N60 PDF

Datasheet Details

Part number:

SWD1N60

Manufacturer:

Samwin

File Size:

855.60 KB

Description:

N-channel mosfet.

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SWD1N60 N-Channel MOSFET Samwin

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