DS065006E3 Datasheet - Sanan

DS065006E3 SiC Schottky Barrier Diode

VRRM 650 V IF(135℃) 10 A QC 17 nC TO-263-2L PIN 1 CASE PIN 2 Marking DS065006E3 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) VRRM 650 TC =25℃ Reverse Voltage (Surge peak) VRSM 650 V TC =25℃ Reverse voltage (DC) VDC 65.

Datasheet SDS065J006E3 650V/6A SiC Schottky Barrier Diode Characteristic Zero Reverse Recovery Current Positive temperature coefficient Temperature-independent performance High-speed switching Low switching loss Low heat dissipation requirements Application Switching power supply Power factor correction Motor drive，traction Charging pile Device SDS065J006E3 Package TO-263-2L Product Descrip.

DS065006E3 Datasheet (331.57 KB)