DS065008C3 Datasheet - Sanan

DS065008C3 SiC Schottky Barrier Diode

VRRM 650 V IF(135℃) 12 A QC 22 nC TO-220-2L PIN 1 PIN 2 CASE Marking DS065008C3 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) VRRM 650 TC =25℃ Reverse Voltage (Surge peak) VRSM 650 V TC =25℃ Reverse voltage (DC) VDC .

Datasheet SDS065J008C3 650V/8A SiC Schottky Barrier Diode Characteristic Zero Reverse Recovery Current Positive temperature coefficient Temperature-independent performance High-speed switching Low switching loss Low heat dissipation requirements Application Switching power supply Power factor correction Motor drive，traction Charging pile Device SDS065J008C3 Package TO-220-2L Product Descripti.

DS065008C3 Datasheet (277.87 KB)