Part number:
2SB817C
Manufacturer:
Sanyo Electric
File Size:
203.07 KB
Description:
Pnp epitaxial planar silicon transistor.
* PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 140V / 12A, AF 80W Output Applications Large current capacitance. Wide ASO and high durability against breakdown. Adoption of MBIT process. Specifications ( ) : 2SB817C Absolute Ma
2SB817C
Sanyo Electric
203.07 KB
Pnp epitaxial planar silicon transistor.
📁 Related Datasheet
2SB817 - PNP Epitaxial Planar Silicon Transistors
(Sanyo Semicon Device)
Ordering number:680F
PNP Epitaxial Planar Silicon Transistors NPN Triple Diffused Planar Silicon Transistors
2SB817/2SD1047
140V/12A AF 60W Output Ap.
2SB817 - Silicon PNP Power Transistor
(Inchange Semiconductor)
isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -140V(Min) ·Good Linearity of hFE ·High Current Capabi.
2SB817C - Bipolar Transistor
(ON Semiconductor)
Ordering number : ENA0188B
2SB817C
Bipolar Transistor
–140V, –12A, Low VCE(sat) PNP TO-3P-3L
http://onsemi.
Features
• Large current capacitance .
2SB817C - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SB817C
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= -2.0V(Max.) @IC= -5A ·Goo.
2SB817E - Power Transistor
(TAITRON)
Power Transistor (PNP) 2SB817E
Power Transistor (PNP)
Features
• 2SB817E transistor is designed for use in general purpose power amplifier, applicatio.
2SB817E - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SB817E
DESCRIPTION ··Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -140V(Min) ·Good Line.
2SB810 - PNP SILICON TRANSISTOR
(NEC)
.
2SB812 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
2SB812
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min) ·High Power Dissipation ·Complement .
