* Adoption of FBET, MBIT processes
* Fast switching speed
* High breakdown voltage, large current capacity ( )2SA1709 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collec
2SA1709
Sanyo Semicon Device
394.15 KB
Pnp/npn epitaxial planar silicon transistor.
Ordering number : EN3096A
2SA1709 / 2SC4489
SANYO Semiconductors
DATA SHEET
2SA1709/2SC4489
PNP/NPN Epitaxial Planar Silicon Transistor
High-Volta.
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DESCRIPTION ·High breakdown voltage ·Low Collector-Emitter Saturation Voltage ·High Power Dissipation-
: PC= 10W@TC=.
2SA1700 - PNP Epitaxial Silicon Transistor
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(BLUE ROCKET ELECTRONICS)
2SA1700
Rev.E May.-2016
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/ Descriptions TO-252 PNP 。Silicon PNP transistor in a TO-252 Plastic Package.
/ Features ，， MBIT 。 High br.
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1.BASE 2.COLLECTOR 3.EMITTER
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TO-251/TO-252-2L Transistor
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1 23
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High breakdown voltage Adoption of MBIT process Excellen.
2SA1700 - PNP Epitaxial Planar Silicon Transistor
(GME)
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z High breakdown voltage. z Adoption of MBIT process. z Excellent hFE linearity.
Pb
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2SA1700 - PNP EPITAXIAL SILICON TRANSISTOR
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UNISONIC TECHNOLOGIES CO., LTD
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2SA1701 - PNP/NPN Epitaxial Planar Silicon Transistors
(Sanyo Semicon Device)
Ordering number:EN3022
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1701/2SC4481
Low-Frequency General-Purpose Amplifier Applications
Application.
2SA1702 - PNP Epitaxial Planar Silicon Transistors
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