2SA1770 Datasheet PDF - Sanyo Semicon Device PNP/NPN Epitaxial Planar Silicon Transistors Specs

2SA1770 - PNP/NPN Epitaxial Planar Silicon Transistors

Datasheet Summary

Features

Adoption of MBIT process.
High breakdown voltage and large current capacity. Package Dimensions unit:mm 2064A [2SA1770/2SC4614] 2.5 1.45 6.9 1.0 4.5 1.0 0.6 1.0 0.9 1 2 3 0.5 0.45 ( ) : 2SA1770 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Colletor Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tst.

Datasheet Details

Part number	2SA1770
Manufacturer	Sanyo Semicon Device
File Size	78.47 KB
Description	PNP/NPN Epitaxial Planar Silicon Transistors
Datasheet	2SA1770 Datasheet
Additional preview pages of the 2SA1770 datasheet.

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Full PDF Text Transcription

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Ordering number:ENN3578 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1770/2SC4614 High-Voltage Switching Applications Features · Adoption of MBIT process. · High breakdown voltage and large current capacity. Package Dimensions unit:mm 2064A [2SA1770/2SC4614] 2.5 1.45 6.9 1.0 4.5 1.0 0.6 1.0 0.9 1 2 3 0.5 0.45 ( ) : 2SA1770 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Colletor Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions 2.54 2.54 1 : Emitter 2 : Collector 3 : Base SANYO : NMP Ratings (–)180 (–)160 (–)6 (–)1.5 (–)2.5 1 150 –55 to +150 4.0 1.

Published: Mar 22, 2005 |