* High speed (tf=100ns typ).
* High reliability (Adoption of HVP process).
* High breakdown voltage (VCBO=1500V).
* Adoption of MBIT process. Package Dimensions unit:mm 2039D [2SC3896] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collec
2SC3896
Sanyo Semicon Device
94.72 KB
Npn transistor.
Ordering number:EN4097 NPN Triple Diffused Planar Silicon Transistor 2SC3896 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applicatio.
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