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2SC3893A Silicon NPN Power Transistor

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Description

isc Silicon NPN Power Transistor .
High Breakdown Voltage- :VCBO= 1500V (Min). High Switching Speed. Low Saturation Voltage. Built-in Damper Diode. Minimum Lot-to-L.

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Datasheet Specifications

Part number
2SC3893A
Manufacturer
Inchange Semiconductor
File Size
214.86 KB
Datasheet
2SC3893A-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

Applications

* Designed for horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 8 A ICM Collector Cur

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