* Adoption of FBET and MBIT processes.
* Low saturation voltage.
* High current capacity and wide ASO. Package Dimensions unit:mm 2009B [2SB986/2SD1348] ( ) : 2SB986 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage
2SD1348
Sanyo Semicon Device
123.89 KB
Pnp/npn epitaxial planar silicon transistors.
Ordering number:1245C
PNP/NPN Epitaxial Planar Silicon Darlington Transistors
2SB986/2SD1348
50V/4A Switching Applications
Applications
* Power .
📁 Related Datasheet
2SD1340 - Silicon NPN Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
2SD1340
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode ·Mini.
2SD1341P - NPN Transistor
(Sanyo Semicon Device)
..
.
2SD1342 - Silicon NPN Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-t.
2SD1344 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-t.
2SD1344 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1344
..
DESCRIPTION ·With TO-3 package ·High volta.
2SD1345 - Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
DESCRIPTION ·High Switching Time ·Low Collector Saturation Voltage
: VCE(sat)= 0.4V(Max)@IC= 4A ·Wide Area of Safe O.
2SD1347 - NPN Epitaxial Planar Silicon Transistors
(Sanyo Semicon Device)
Ordering number:1244C
PNP/NPN Epitaxial Planar Silicon Transistors
2SB985/2SD1347
Large-Current Driving Applications
Applcations
· Power supplies, r.
2SD1348 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector Current-IC= 4.0A ·Low Saturation Voltage -
: VCE(sat)= 0.5V(Max)@ IC= 2A, IB= 0.1A ·Good.
