Datasheet4U Logo Datasheet4U.com

2SD1395

NPN Triple Diffused Planar Silicon Darlington Transistor

2SD1395 Features

* High DC current gain.

* Large current capacity

* Wide ASO.

* On-chip Zener diode of 60±10V between collector and base.

* Uniformity in collector-to-base breakdown voltage due to adoption of accurate impurity diffusion process.

* High inductive load handling capability. Spec

2SD1395 Datasheet (78.42 KB)

Preview of 2SD1395 PDF

Datasheet Details

Part number:

2SD1395

Manufacturer:

Sanyo Semicon Device

File Size:

78.42 KB

Description:

Npn triple diffused planar silicon darlington transistor.
Ordering number:EN1221C NPN Triple Diffused Planar Silicon Darlington Transistor 2SD1395 Driver Applications Applications
* Suitable for use in .

📁 Related Datasheet

2SD1390 - Power Transistor (Inchange Semiconductor)
isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Reliability ·Minimum Lot-to-Lot variations for robust.

2SD1391 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor 2SD1391 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Reliability ·Minimum Lot-to-Lot variations f.

2SD1391 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1391 .. DESCRIPTION ·With TO-3PN package ·High spe.

2SD1392 - NPN SILICON EPITAXIAL DARLINGTON TRANSISTOR (ETC)
.. .. .

2SD1393 - NPN Transistor (INCHANGE)
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1393 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·.

2SD1394 - NPN Transistor (INCHANGE)
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1394 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·.

2SD1395 - NPN Transistor (INCHANGE)
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1395 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·.

2SD1396 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-t.

TAGS

2SD1395 NPN Triple Diffused Planar Silicon Darlington Transistor Sanyo Semicon Device

Image Gallery

2SD1395 Datasheet Preview Page 2 2SD1395 Datasheet Preview Page 3

2SD1395 Distributor