2SD1394 Datasheet - INCHANGE

2SD1394, NPN Transistor

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1394 DESCRIPTION *Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Mi

Applications

* Designed for general purpose amplifier and low speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A

2SD1394-INCHANGE.pdf