2SD1390 Datasheet - Inchange Semiconductor

2SD1390, Power Transistor

isc Silicon NPN Power Transistor DESCRIPTION *High Breakdown Voltage- : VCBO= 1500V (Min) *High Reliability *Minimum Lot-to-Lot variation

Applications

* Designed for line-operated horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 1 A IC

2SD1390_InchangeSemiconductor.pdf