2SD1390 Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
High Breakdown Voltage- : VCBO= 1500V (Min). High Reliability. Minimum Lot-to-Lot variations for robust device performance and reliable o.

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Datasheet Specifications

Part number: 2SD1390
Manufacturer: Inchange Semiconductor
File Size: 207.69 KB
Datasheet: 2SD1390_InchangeSemiconductor.pdf
Description: Power Transistor

Applications

* Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 1 A IC

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2SD1390 Power Transistor Inchange Semiconductor

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