Datasheet Details
- Part number
- 2SD1390
- Manufacturer
- Inchange Semiconductor
- File Size
- 207.69 KB
- Datasheet
- 2SD1390_InchangeSemiconductor.pdf
- Description
- Power Transistor
2SD1390 Description
isc Silicon NPN Power Transistor .
High Breakdown Voltage-
: VCBO= 1500V (Min).
High Reliability.
Minimum Lot-to-Lot variations for robust device
performance and reliable o.
2SD1390 Applications
* Designed for line-operated horizontal deflection output
applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCES
Collector-Emitter Voltage
1500
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current- Continuous
1
A
IC
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