Datasheet4U Logo Datasheet4U.com

2SD1397 - NPN Transistor

2SD1397 Description

isc Silicon NPN Power Transistor .
High Breakdown Voltage- : VCBO= 1500V (Min). High Switching Speed. Built-in Damper Diode. Minimum Lot-to-Lot variations for robust de.

2SD1397 Applications

* Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current- Continuous 3.5 A ICP Collector Current-Pul

📥 Download Datasheet

Preview of 2SD1397 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SD1397
Manufacturer
INCHANGE
File Size
210.72 KB
Datasheet
2SD1397-INCHANGE.pdf
Description
NPN Transistor

📁 Related Datasheet

  • 2SD1390 - Power Transistor (Inchange Semiconductor)
  • 2SD1392 - NPN SILICON EPITAXIAL DARLINGTON TRANSISTOR (ETC)
  • 2SD1395 - NPN Triple Diffused Planar Silicon Darlington Transistor (Sanyo Semicon Device)
  • 2SD1302 - Silicon NPN Transistor (Panasonic Semiconductor)
  • 2SD1303 - NPN Transistor (SEMTECH)
  • 2SD1304 - Silicon NPN Transistor (Panasonic Semiconductor)
  • 2SD1306 - Silicon NPN Transistor (Hitachi Semiconductor)
  • 2SD1308 - SILICON POWER TRANSISTOR (SavantIC)

📌 All Tags

INCHANGE 2SD1397-like datasheet