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2SD1399 NPN Transistor

2SD1399 Description

isc Silicon NPN Power Transistor .
High Breakdown Voltage : VCBO= 1500V (Min). High Switching Speed. Built-in damper diode. Minimum Lot-to-Lot variations for robust dev.

2SD1399 Applications

* Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak

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Datasheet Details

Part number
2SD1399
Manufacturer
INCHANGE
File Size
210.99 KB
Datasheet
2SD1399-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD1399-like datasheet