3SK248 - N-Channel Enhancement Silicon MOSFET

Sanyo Semicon Device

Datasheet Details

Part number	3SK248
Manufacturer	Sanyo Semicon Device
File Size	68.96 KB
Description	N-Channel Enhancement Silicon MOSFET
Datasheet	3SK248_SanyoSemiconDevice.pdf

MOSFET with a back gate terminal.
Enhancement type.
Small ON resistance.
Small-sized package permitting 3SK248-applied sets to be made smaller and slimmer. Package Dimensions unit:mm 2100A 1.9 0.95 0.95 0.4 43 [3SK248] 0.16 0 to 0.1 1.5 0.5 2.5 12 0.95 0.85 2.9 0.6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Allowable Power Dissipation Channel Temperature Storage Temperature.

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Published: Mar 30, 2005 |