3SK264 - N-Channel Silicon MOSFET

Sanyo Semicon Device

Datasheet Details

Enhancement type.
Easy AGC (Cut off at VG2S=0V).
Small noise figure.
Excels in cross modulation characteristics. Package Dimensions unit:mm 2096A [3SK264] 1.9 0.95 0.95 0.4 43 0.16 0 to 0.1 1.5 0.5 2.5 12 0.95 0.85 2.9 0.6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate1-to-Source Voltage Gate2-to-Source Voltage Drain Current Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDS VG1S VG2S ID PD.

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Published: Mar 30, 2005 |