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3SK260 Datasheet - Toshiba Semiconductor

3SK260 Silicon N Channel Dual Gate MOS Type FET

3SK260 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK260 TV Tuner VHF Mixer Applications VHF RF Amplifier Applications Unit: mm High conversion gain: GCS = 24.5dB (typ.) Low noise figure: NFCS = 3.3dB (typ.) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate 1-source voltage Gate 2-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range Symbol VDS VG1S VG2S ID PD Tch Tstg Rating 13.5 ±8 ±8 .

3SK260 Datasheet (193.75 KB)

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Datasheet Details

Part number:

3SK260

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

193.75 KB

Description:

Silicon n channel dual gate mos type fet.

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3SK260 Silicon Channel Dual Gate MOS Type FET Toshiba Semiconductor

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