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3SK260 - Silicon N Channel Dual Gate MOS Type FET

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Part number 3SK260
Manufacturer Toshiba Semiconductor
File Size 193.75 KB
Description Silicon N Channel Dual Gate MOS Type FET
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3SK260 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK260 TV Tuner VHF Mixer Applications VHF RF Amplifier Applications Unit: mm · High conversion gain: GCS = 24.5dB (typ.) · Low noise figure: NFCS = 3.3dB (typ.) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate 1-source voltage Gate 2-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range Symbol VDS VG1S VG2S ID PD Tch Tstg Rating 13.5 ±8 ±8 30 100 125 -55~125 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-2K1B Weight: 0.006 g (typ.
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