3SK260 Datasheet (Toshiba Semiconductor) - Silicon N Channel Dual Gate MOS Type FET

3SK260, Silicon N Channel Dual Gate MOS Type FET

3SK260 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK260 TV Tuner VHF Mixer Applications VHF RF Amplifier Applications Unit: mm High conversion gain: GCS = 24.5dB (typ.) Low noise figure: NFCS = 3.3dB (typ.) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate 1-source voltage Gate 2-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range Symbol VDS VG1S VG2S ID PD Tch Tstg Rating 13.5 ±8 ±8