3SK260 Silicon N Channel Dual Gate MOS Type FET

Toshiba Semiconductor

Description

3SK260 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK260 TV Tuner VHF Mixer Applications VHF RF Amplifier Applications Uni.

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Datasheet Specifications

Part number: 3SK260
Manufacturer: Toshiba ↗ Semiconductor
File Size: 193.75 KB
Datasheet: 3SK260_ToshibaSemiconductor.pdf
Description: Silicon N Channel Dual Gate MOS Type FET

Applications

* VHF RF Amplifier Applications Unit: mm
* High conversion gain: GCS = 24.5dB (typ. )
* Low noise figure: NFCS = 3.3dB (typ. ) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate 1-source voltage Gate 2-source voltage Drain current Drain power dissipation Channel temperatur

3SK260 Distributors

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3SK260 Silicon Channel Dual Gate MOS Type FET Toshiba Semiconductor

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