* Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications ( ) : 2SA2169 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-
C6017
Sanyo Semicon Device
244.11 KB
2sc6017.
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Ordering number : ENN8275
2SA2169 / 2SC6017
PNP / NPN Epitaxial Planar Silicon Transistors
2SA2169 / 2SC6017
Applications
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15.5±0.5
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..
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2SC6019
2SC6019
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2SC6025
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2SC6040
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2SC6042
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC6042
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