* Adoption of FBET, MBIT process.
* High current capacitance.
* Low collector-to-emitter saturation voltage.
* High-speed switching.
* High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Co
C6099
Sanyo Semicon Device
62.10 KB
2sc6099.
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Ordering number : ENA0435
2SC6099
SANYO Semiconductors
DATA SHEET
2SC6099 NPN Epitaxial Planar Silicon Transistor
High-Voltage S.
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