* Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Co
C6094
Sanyo Semicon Device
52.80 KB
2sc6094.
Ordering number : ENA0410 2SC6094 www.DataSheet4U.com 2SC6094 Applications NPN Epitaxial Planar Silicon Transistor High-Current Switchin.
📁 Related Datasheet
C6090LS 2SC6090LS (Sanyo Semicon Device)
C6092LS 2SC6092LS (Sanyo)
C6093 NPN Transistor (INCHANGE)
C6093LS NPN Transistor (Sanyo Semicon Device)
C6099 2SC6099 (Sanyo Semicon Device)
C6000 2SC6000 (Toshiba Semiconductor)
C6010 2SC6010 (Toshiba)
C6011 2SC6011 (Allegro)
C6012 2SC6012 (Panasonic Semiconductor)
C6017 2SC6017 (Sanyo Semicon Device)
