* Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter V
C6082
Sanyo Semicon Device
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2sc6082.
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Ordering number : ENA0279
2SC6082
SANYO Semiconductors
DATA SHEET
NPN Epitaxial Planar Silicon Transistor
2SC6082
Application.
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