* Adoption of FBET and MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Narrow hFE range. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Para
C6019
Sanyo Semicon Device
236.02 KB
2sc6019.
www.DataSheet4U.com Ordering number : ENN8342 2SC6019 2SC6019 Applications NPN Epitaxial Planar Silicon Transistor DC / DC Converter App.
📁 Related Datasheet
C6010 2SC6010 (Toshiba)
C6011 2SC6011 (Allegro)
C6012 2SC6012 (Panasonic Semiconductor)
C6017 2SC6017 (Sanyo Semicon Device)
C6000 2SC6000 (Toshiba Semiconductor)
C6025 NPN Epitaxial Planar Silicon Transistor (Sanyo)
C6040 2SC6040 (Toshiba Semiconductor)
C6042 2SC6042 (Toshiba Semiconductor)
C6045 Silicon NPN Transistor (Panasonic)
C6050 Silicon NPN Transistor (Panasonic)
