Datasheet4U Logo Datasheet4U.com

CPH6313 - High-Speed Switching Applications

Datasheet Summary

Features

  • Package Dimensions unit : mm 2151A [CPH6315] 6 5 4 0.6 0.2 Low ON-resistance. High-speed switching. 2.5V drive. 2.9 0.15 0.05 1.6 2.8 1 2 0.4 Specifications Absolute Maximum Ratings a t Ta=25 °C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1200mm2!0.8mm.

📥 Download Datasheet

Datasheet preview – CPH6313

Datasheet Details

Part number CPH6313
Manufacturer Sanyo Semicon Device
File Size 29.59 KB
Description High-Speed Switching Applications
Datasheet download datasheet CPH6313 Datasheet
Additional preview pages of the CPH6313 datasheet.

📁 Similar Datasheet

  • CPH6314 - P-Channel Silicon MOSFET (ON Semiconductor)
  • CPH6324 - P-Channel MOSFET (VBsemi)
  • CPH6337 - Power MOSFET (ON Semiconductor)
  • CPH6347 - Power MOSFET (ON Semiconductor)
  • CPH6350 - P-Channel Power MOSFET (ON Semiconductor)
  • CPH6354 - Power MOSFET (ON Semiconductor)
  • CPH6355 - Power MOSFET (ON Semiconductor)
  • CPH6001A - RF Transistor (ON Semiconductor)
  • CPH6003A - RF Transistor (ON Semiconductor)
  • CPH6020 - RF Transistor (ON Semiconductor)
Other Datasheets by Sanyo Semicon Device
  • CPH6311 - Ultrahigh-Speed Switching Applications
  • CPH6312 - High-Speed Switching Applications
  • CPH6314 - P-Channel Silicon MOSFET
  • CPH6315 - High-Speed Switching Applications
  • CPH6316 - P-Channel Silicon MOSFET
  • CPH6318 - High-Speed Switching Applications
  • CPH6301 - Ultrahigh-Speed Switching Applications
  • CPH6302 - Ultrahigh-Speed Switching Applications

Full PDF Text Transcription

Click to expand full text
Ordering number : ENN7017 CPH6313 P-Channel Silicon MOSFET CPH6313 High-Speed Switching Applications Features • • • Package Dimensions unit : mm 2151A [CPH6315] 6 5 4 0.6 0.2 Low ON-resistance. High-speed switching. 2.5V drive. 2.9 0.15 0.05 1.6 2.8 1 2 0.4 Specifications Absolute Maximum Ratings a t Ta=25 °C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1200mm2!0.8mm) Conditions 0.7 0.9 0.2 3 0.95 0.6 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : CPH6 Ratings -20 ± 10 --4 -16 1.
Published: |