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CPH6318 - High-Speed Switching Applications

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Features

  • Package Dimensions unit : mm 2151A [CPH6318] 6 5 4 0.6 0.05 Low ON-resistance. High-speed switching. 1.8V drive. 1 2 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Mounted on a FR4 board PW≤5s C.

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Datasheet Details

Part number CPH6318
Manufacturer Sanyo Semicon Device
File Size 62.77 KB
Description High-Speed Switching Applications
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www.DataSheet4U.com Ordering number : ENN7212 CPH6318 P-Channel Silicon MOSFET CPH6318 High-Speed Switching Applications Features • • • Package Dimensions unit : mm 2151A [CPH6318] 6 5 4 0.6 0.05 Low ON-resistance. High-speed switching. 1.8V drive. 1 2 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Mounted on a FR4 board PW≤5s Conditions 0.4 0.7 0.9 0.2 3 0.95 0.6 1.6 2.8 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : CPH6 Ratings --12 ±8 --6 --24 1.6 2.
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